Recent Report on Global Next Generation Memory Market 2017-2021

Report : Global Next Generation Memory Market 2017-2021 is a new market research publication announced by Reportstack. 

Report Outline: Next-generation memories include the latest developments in the memory industry such as ferroelectric random-access memory (FeRAM), phase-change memory (PCM), resistive random-access memory (ReRAM), and magnetic random-access memory (MRAM). The MRAM segment includes spin-transfer torque random-access memory (STT-MRAM). Next-generation memories are usually nonvolatile in nature.

For detailed report with TOC, please click here ​Global Next Generation Memory Market 2017-2021

Market Growth: The global next generation memory market to grow at a CAGR of 66.63% during the period 2017-2021.

Key vendors • Cypress Semiconductor
• Fujitsu
• Intel
• IBM
• Micron Technology
• ROHM Semiconductor
• Samsung Electronics
• Texas Instruments
• Toshiba

Other prominent vendors • Adesto Technologies
• Crossbar
• Everspin Technologies

Regions Covered:

• Americas
• APAC
• EMEA

Companies Mentioned

Cypress Semiconductor, Fujitsu, Intel, IBM, Micron Technology, ROHM Semiconductor, Samsung Electronics, Texas Instruments, Toshiba, Adesto Technologies, Crossbar, and Everspin Technologies.

Contact:

Debora White

Manager - Marketing

debora@reportstack.com

Ph: +1-888-789-6604

Reportstack Market Research

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