Recent Report on Global Wide-Bandgap Power (WBG) Semiconductor Devices Market 2017-2021

Report : Global Wide-Bandgap Power (WBG) Semiconductor Devices Market 2017-2021 is a new market research publication announced by Reportstack. 

Report Outline: Wide-bandgap (WBG) semiconductors are materials that possess significantly greater bandgaps than silicon. For example, diamond, zinc oxide, silicon carbide (SiC), and gallium nitride (GaN) are WBG semiconductors. WBG power semiconductor devices comprise of materials such as SiC and GaN. The bandgap is the difference in the energy between the valence band and conduction band of a solid material.

For detailed report with TOC, please click here ​Global Wide-Bandgap Power (WBG) Semiconductor Devices Market 2017-2021

Market Growth: The global wide-bandgap power semiconductor device market to grow at a CAGR of 37.90% during the period 2017-2021.

Key vendors • Infineon Technologies
• Cree
• Transphorm
• ROHM Semiconductor

Other prominent vendors • Texas Instruments 
• STMicroelectronics
• GaN Systems
• Microsemi Corporation
• United Silicon Carbide 
• Exagan
• GeneSiC Semiconductor 
• Monolith Semiconductor
• Qorvo

Regions Covered:

• Americas
• APAC
• EMEA

Companies Mentioned

Infineon Technologies, Cree, Transphorm, and ROHM Semiconductor. Other Prominent Vendors in the market are: Texas Instruments, STMicroelectronics, GaN Systems, Microsemi Corporation, United Silicon Carbide, Exagan, GeneSiC Semiconductor, Monolith Semiconductor, and Qorvo.

Contact:

Debora White

Manager - Marketing

debora@reportstack.com

Ph: +1-888-789-6604

Reportstack Market Research

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