New Report Covers Global IGBT Market 2017-2021

​Report : Global IGBT Market 2017-2021 is a new market research publication announced by Reportstack. 

Report Outline: Insulated gate bipolar transistor (IGBT) is a semiconductor power device that is used to control the electrical energy. It provides a stable supply of electricity by reducing the congestion in power supply, leading to optimized power utilization. It is an electronic switch that provides fast switching with electrical efficiency. It is a fusion of bipolar junction transistor (BJT) and power MOSFET (metal oxide semiconductor field effect transistor). IGBTs have the high current handling capability of BJT and high switching speed of power MOSFETs, making it a better device than other transistors. It is also known by names such as bipolar mode MOSFET, conductivity modulated field effect transistor (COMFET), and bipolar MOS transistor.

For detailed report with TOC, please click here ​Global IGBT Market 2017-2021

Market Growth: The global IGBT market to grow at a CAGR of 11.50% during the period 2017-2021.

Key vendors • Fuji Electric
• Infineon Technologies
• Mitsubishi Corporation
• SEMIKRON

Other prominent vendors • Alpha and Omega Semiconductor
• IXYS Corporation
• ON Semiconductor
• STMicroelectronics
• TOSHIBA

Regions Covered:

• Americas
• APAC
• EMEA

Companies Mentioned

Fuji Electric, Infineon Technologies, Mitsubishi Corporation, SEMIKRON, Alpha and Omega Semiconductor, IXYS Corporation, ON Semiconductor, STMicroelectronics, and TOSHIBA.

Contact:

Debora White

Manager - Marketing

debora@reportstack.com

Ph: +1-888-789-6604

Reportstack Market Research

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